Novel material to improve image sensor yield during wafer sawing

ABSTRACT

A new method is provided of treating the wafer prior to the process of singulating the wafer into individual die. A first surface of the wafer over which CMOS image sensor devices have been created is coated with a layer of material that is non-soluble in water. The wafer is attached to a tape by bringing a second surface of the wafer in contact with the tape. The wafer is singulated by approaching the first surface of the wafer and by sawing first through the layer of material that has been coated over the first surface of the wafer and by then sawing through the wafer, stopping at the surface of the tape. A thorough water rinse is applied to the surface of the singulated wafer, followed by a wafer clean applying specific chemicals for this purpose. The singulated die is now removed from the tape and further processed by applying steps of die mount, wire bonding, surrounding the die in a mold compound and marking the package.

[0001] This application is a continuation-in-part of attorney docketTSMC01-1621, Ser. No. 10/209,419, filing date Jul. 30, 2002, assigned tocommon assignee.

BACKGROUND OF THE INVENTION

[0002] (1) Field of the Invention

[0003] The invention relates to the fabrication of integrated circuitdevices, and more particularly, to a method of separating created imagesensor devices in such a way that foreign particles created asbyproducts of the sawing operation do not contribute to yield loss ofthe separated devices.

[0004] (2) Description of the Prior Art

[0005] The art of creating CMOS base image sensor devices is well knownand is in addition highlighted in considerable detail in the belowreferenced and related US patents. Since this art does only indirectlyapply to the invention and in view of the available literature on thesubject of CMOS image sensor devices, no effort will be made at thistime to provide further insight into the subject of creating CMOS imagesensor devices.

[0006] CMOS image sensor devices are typically, like the majority ofsemiconductor devices that are created in a high volume andcost-effective manufacturing operation, created as multiple devices overthe surface of one substrate. After the creation of these devices hasbeen completed, the devices must be separated or singulated for furtherpackaging of the devices. This process of singulation into individualchips is typically performed by sawing the wafer over the surface ofwhich the devices have been created along scribe lines that have beenprovided over the surface of the substrate for this purpose. Thisprocess of sawing creates as a byproduct matter that is removed as aresult of the sawing, which is essentially silicon based since it is thesilicon substrate that is significantly affected by the sawing process.

[0007] The created byproduct of the sawing operation is not undercontrol as far as distribution and scattering of this material isconcerned. This leads to the creation of depositions of this byproductnot only where it is not desired but also where in addition it can havea severely negative impact on final product performance and acceptance.In short: the process of chip singulation by sawing of the wafer readilyresults in causing otherwise good chips to be contaminated withbyproducts of the sawing process, which is a ready cause of finalproduct failure. The invention addresses this concern and provides amethod whereby a negative yield impact caused by byproducts of asingulation operation is eliminated.

[0008] U.S. Pat. No. 6,271,103 B1 (Lee) shows an UV Tape and die sawprocess for an image sensor.

[0009] U.S. Pat. No. 5,981,361 (Yamada) shows a dicing process.

[0010] U.S. Pat. No. 5,840,614 (Sim et al.) reveals a process using UVtape and lapping and sawing.

[0011] U.S. Pat. No. 5,641,714 (Yamanaka) discloses a process with tape.

[0012] U.S. Pat. No. 6,074,896 (Dando) shows a sawing process involvingtape.

SUMMARY OF THE INVENTION

[0013] A principle objective of the invention is to provide a method ofsingulating image sensor devices, such as CMOS image sensor or CCD, froma wafer over the surface of which these devices have been created.

[0014] Another objective of the invention is to eliminate the process ofdie singulation as a device yield detractor.

[0015] Yet another objective of the invention is to provide a method ofcontrolling byproducts that are created during the processes ofsingulating die from a wafer.

[0016] In accordance with the objectives of the invention a new methodis provided of treating the wafer prior to the process of singulatingthe wafer into individual die. A first surface of the wafer over whichCMOS image sensor devices have been created is coated with a layer ofmaterial that is non-soluble in water. The wafer is attached to a tapeby bringing a second surface of the wafer in contact with the tape. Thewafer is singulated by approaching the first surface of the wafer and bysawing first through the layer of material that has been coated over thefirst surface of the wafer and by then sawing through the wafer,stopping at the surface of the tape. A thorough water rinse is appliedto the surface of the singulated wafer, followed by a wafer cleanapplying specific chemicals for this purpose. The singulated die is nowremoved from the tape and further processed by applying steps of diemount, wire bonding, surrounding the die in a mold compound and markingthe package.

BRIEF DESCRIPTION OF THE DRAWINGS

[0017]FIGS. 1 and 2 show conventional processes of singulating a waferover the surface of which CMOS image sensor devices have been created.

[0018]FIG. 3 shows a cross section of a substrate over the surface ofwhich CMOS image sensor devices have been created, a layer of material,which is not soluble in water, has been deposited over the activesurface of the substrate.

[0019]FIG. 4 shows a cross section after the wafer shown in crosssection in FIG. 3 has been singulated down to the surface of the bluetape.

[0020]FIG. 5 shows a cross section after the layer of material, which isnot soluble in water, has been removed from the active surface of thesubstrate.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] Conventional processing steps of creating CMOS image sensordevices typically have a yield of between about 70 and 80%. CMOS imagesensor devices are, due to the nature and the therefrom followingconstruction of the devices, highly sensitive to any foreign particlesor contaminants that may come in contact with or accumulate over exposedsurfaces of the devices before these devices are finally packaged andenclosed.

[0022] In creating CMOS image sensor devices, the step of singulatingthe created devices into individual chips is a step that significantlyand detrimentally introduces a large amount of foreign particles intothe environment that surrounds the devices during and immediately afterthese devices are singulated. This is due to the fact that singulationis performed by sawing the wafer over the surface of which the CMOSimage devices have been created, creating as a byproduct particles ofmostly silicon derived from the silicon substrate. The process ofsingulating the wafer into individual CMOS image sensor devices has beenidentified as causing a yield loss of between about 15% and 20%.

[0023] The current methods of singulating a wafer over the surface ofwhich CMOS image devices have been created comprises the steps of:

[0024] Applying a backside blue tape to the wafer

[0025] Sawing the wafer into individual die, leaving the sawed dieattached to the tape

[0026] Applying a water rinse to the surface of the sawed die

[0027] Removing the sawed die from the tape, and

[0028] Packaging the singulated die.

[0029] This prior art process has been further highlighted with thecross sections shown in FIGS. 1 and 2, wherein specifically arehighlighted:

[0030]10, the substrate over the surface of which CMOS image sensordevices have been created

[0031]12, the blue tape that is attached to a second surface ofsubstrate 10

[0032]14, the multiple CMOS image sensor devices that have been createdover a first or active surface of substrate 10, and

[0033]16, the saw path that will be used for the singulation of thewafer into individual die.

[0034]FIG. 2 shows a prior art cross section after the process of sawingthe wafer 10 has been completed in accordance with the saw path 16,FIG. 1. The singulated die 14 is as yet attached to the blue tape 12.

[0035] At this time, that is after the cross section of FIG. 2 has beenobtained, a water rinse 13 is applied to the surface of the singulateddie after which the die 14 is removed from tape 12 for furtherpackaging.

[0036] The conventional method of die singulation as highlighted aboveis changed as follows:

[0037] Applying a backside blue tape to the wafer

[0038] Next and most significantly to the invention, applying aprotective layer of material that is not soluble in water over theactive or first surface of the wafer, that is the surface over whichCMOS image sensor devices have been created

[0039] Sawing the wafer into individual die by, while approaching thewafer from the first or active side of the wafer, that is the side overwhich the protective layer has been applied:

[0040] 1. sawing through the protective layer applied over the active orfirst surface of the wafer, and then

[0041] 2. sawing through the silicon substrate, leaving the sawed dieattached to the tape

[0042] Applying a water rinse to the surface of the sawed die

[0043] Removing the protective layer from the active surface of thewafer by cleaning the active surface of the wafer with a specialchemical that removes the non-water soluble protective layer

[0044] Removing the sawed die from the tape, and

[0045] Packaging the singulated die.

[0046]FIGS. 3 and 4 further highlight these processing steps, wherebyspecifically is shown in the cross section of FIG. 3 how a layer 18 ofmaterial that is not soluble in water is applied over the surface of thecreated CMOS image sensor devices 14, this after first the wafer hasbeen attached to the blue tape 12. The die saw 20 is positioned abovethe saw path 16 for application to the surface of substrate 10 with theobjective of cutting the wafer along the saw path 16. The result of thisprocess of sawing substrate 10 is shown in the cross section of FIG. 4,where the protective layer 18 has first been removed in accordance withthe saw path 16 after which the silicon of substrate 10 has beenremoved. Layer 18 has, during the processes of sawing the substrate 10,remained in place as a protective layer for and overlying the CMOS imagedevices 14. No foreign particles can therefore be deposited over thesurface of these CMOS image devices 14.

[0047] After the above highlighted sawing of protective layer 18 andwafer 10 has been completed, a water rinse 13, FIG. 4, is applied to theactive surface of the wafer 10. The protective layer 18 is then removedfrom over the active surface of wafer 19.

[0048] The removal of the protective layer 18 results in the crosssection that is shown in FIG. 5. From the sequence of cross section thathave been shown in FIGS. 3 through 5, it is clear that the special layer18, FIGS. 3 and 4, has protected the surface of the layer 14 of CMOSimage sensor devices during the step of singulating the wafer intoindividual die.

[0049] After the layer 18 has been removed from above the active surfaceof the wafer, the singulated die 14 is removed from the tape 12 (notshown) and is now ready for further packaging operations such as diemount, wire bonding, surrounding the die in a mold compound and markingthe package.

[0050] To summarize the invention:

[0051] A new sequence of steps is provided for the singulation of awafer over the surface of which multiple CMOS image sensor devices havebeen created

[0052] The new sequence of processing steps that is provided by theinvention comprises

[0053] 1. first applying a special, protective layer over the first,active surface of the wafer, this layer may not be water soluble

[0054] 2. applying a backside blue tape to a second surface of the wafer

[0055] 3. sawing the wafer by first sawing through the protective layerand then sawing through the silicon of the wafer

[0056] 4. applying a water rinse to the active surface of the sawedwafer

[0057] 5. applying a wafer surface clean using a chemical cleaning agentthat removes the special layer from the first surface of the wafer, and

[0058] 6. removing the singulated die from the blue tape

[0059] The singulated CMOS image sensor device die are then furtherpackaged following conventional methods of device packaging.

[0060] While the examples that have been shown in the cross sections ofFIGS. 3 through 5 concentrate on the singulation of CMOS image sensordevices, it must be emphasized that the method of the invention ofprotecting the active surface of a substrate before this substrate issingulated is equally applicable for substrates over the surface ofwhich semiconductor devices other than CMOS image sensor devices havebeen created. The concern of not creating a yield detractor due to thedisbursement and accumulation of foreign matter over the surface ofcreated semiconductor devices is universal and is not limited to wherethe created semiconductor devices are CMOS image sensor devices, even ifthis latter category of devices is most sensitive to the impact offoreign particles that are deposited over the surface thereof.

[0061] It must further be emphasized, as an extension of the invention,that the invention is not limited to removing the protective layerbefore die mounting but can be further extended to where the protectivelayer is removed after die mounting.

[0062] To further highlight this extension, the steps of the inventionare detailed below for the application where the removal of the speciallayer from die is performed after die mounting, as follows:

[0063] 1. first applying a special, protective layer over the first,active surface of the wafer, this layer may not be water soluble

[0064] 2. applying a backside blue tape to a second surface of the wafer

[0065] 3. sawing the wafer by first sawing through the protective layerand then sawing through the silicon of the wafer

[0066] 4. applying a water rinse to the active surface of the sawedwafer

[0067] 5. removing the singulated die from the blue tape

[0068] 6. mounting the singulated die over a supporting surface, and

[0069] 7. applying a wafer surface clean to the mounted die using achemical cleaning agent that removes the special layer from the surfaceof die.

[0070] The above referred to supporting surface can be a semiconductorsubstrate, a printed circuit board, a flex circuit, a metallizedsubstrate, a glass substrate and a semiconductor device mountingsupport.

[0071] The above referred to semiconductor substrate can be a siliconsemiconductor substrate, a ceramic substrate, a glass substrate, agallium arsenide substrate, a silicon substrate comprising a singlelayer of material, such as a silicon wafer or comprising silicon oninsulator (SOI) technology and silicon on sapphire (SOS) technology, adoped or undoped semiconductor, epitaxial layers of silicon supported bya base semiconductor, a sapphire substrate or a substrate used for flatpanel displays.

[0072] The above referred protective layer comprising a non-watersoluble material can be a negative photoresist without photo-sensitivecomponents or a positive photoresist.

[0073] The above referred to chemical cleaning agent that removes thenon-water soluble material layer from die, which can as stated beapplied either before or after die mount, comprises poly-ethylene,polymethyl methacrylate (PPMA), poly glycidol methacrylate (PGMA),propylene glycol monoethyl ether acetate, ethylene glycol monoethylether acetate, cyclized 1,4-cis polyisoprene, novolak resin,methacrylate resin, cresol formaldehyde, ethyl lactate or ethyl3-ethoxypropionate.

[0074] Where previously the invention has been highlighted as typicallybeing applied to the creation of CMOS image sensors, the invention isnot limited to CMOS image sensors but can preferably be extended to thecreation of Charge Coupled Devices (CCD).

[0075] Although the invention has been described and illustrated withreference to specific illustrative embodiments thereof, it is notintended that the invention be limited to those illustrativeembodiments. Those skilled in the art will recognize that variations andmodifications can be made without departing from the spirit of theinvention. It is therefore intended to include within the invention allsuch variations and modifications which fall within the scope of theappended claims and equivalents thereof.

What is claimed is:
 1. A method for singulation of semiconductor devicesfrom a semiconductor substrate, comprising the steps of: providing asemiconductor substrate, said substrate having semiconductor devicescreated over said substrate; depositing a layer of non-water solublematerial over said semiconductor devices; singulating said substratewith said semiconductor devices by sawing to provide singulatedsemiconductor dies; and removing said layer of non-water solublematerial from said singulated semiconductor dies.
 2. The method of claim1, said semiconductor devices comprising CMOS image sensor devices.
 3. Amethod for singulation of a CMOS image sensor device die or a ChargeCoupled Device (CCD) die from a semiconductor substrate, comprising thesteps of: providing a semiconductor substrate; creating CMOS imagesensor devices or CCD devices over said substrate; depositing a layer ofnon-water soluble material over said CMOS image sensor devices or overthe CCD devices; singulating said substrate by sawing to createsingulated CMOS image sensor device die or singulated CCD device die;and removing said layer of non-water soluble material from saidsingulated CMOS image sensor device die or singulated CCD device die. 4.A method for singulation of semiconductor devices from a semiconductorsubstrate, comprising the steps of: providing a semiconductor substrate;providing semiconductor devices over said substrate; providing a layerof protective material over said semiconductor devices; singulating saidsubstrate with said semiconductor devices by sawing, thereby creatingsingulated semiconductor die; and removing said layer of protectivematerial from said singulated semiconductor die.
 5. The method of claim4, said semiconductor devices comprising CMOS image sensor devices. 6.The method of claim 4, said protective material being non-soluble inwater.
 7. A method for singulation of a CMOS image sensor device die ora CCD device die from a semiconductor substrate, comprising the stepsof: providing a semiconductor substrate; providing CMOS image sensordevices or CCD devices over said substrate; providing a layer ofprotective material over said CMOS image sensor devices or CCD devices;singulating said substrate by sawing said substrate to form singulatedCMOS image sensor device die or singulated CCD device die; and removingsaid layer of protective material from said singulated CMOS image sensordevice die or from said singulated CCD device die.
 8. The method ofclaim 7, said protective material being non-soluble in water.
 9. Themethod of claim 1, said semiconductor devices comprising CCD devices.10. The method of claim 1, wherein said non-water soluble material is anegative photoresist without photo-sensitive components, or a positivephotoresist.
 11. The method of claim 1, wherein said non-water solublematerial is poly-ethylene, polymethyl methacrylate (PMMA), poly glycidolmethacrylate (PGMA), propylene glycol monoethyl ether acetate, ethyleneglycol monoethyl ether acetate, cyclized 1,4-cis polyisoprene, novolakresin or methacrylate resin, cresol formaldehyde, ethyl lactate, orethyl 3-ethoxypropionate.
 12. The method of claim 3, wherein saidnon-water soluble material is a negative photoresist withoutphoto-sensitive components, or a positive photoresist.
 13. The method ofclaim 3, wherein said non-water soluble material is poly-ethylene,polymethyl methacrylate (PMMA), poly glycidol methacrylate (PGMA),propylene glycol monoethyl ether acetate, ethylene glycol monoethylether acetate, cyclized 1,4-cis polyisoprene, novolak resin,methacrylate resin, cresol formaldehyde, ethyl lactate, or ethyl3-ethoxypropionate.
 14. The method of claim 7, wherein said layer ofprotective material is a negative photoresist without photo-sensitivecomponents, or a positive photoresist.
 15. The method of claim 7,wherein said layer of protective material is poly-ethylene, polymethylmethacrylate (PMMA), poly glycidol methacrylate (PGMA), propylene glycolmonoethyl ether acetate, ethylene glycol monoethyl ether acetate,cyclized 1,4-cis polyisoprene, novolak resin, methacrylate resin, cresolformaldehyde, ethyl lactate, or ethyl 3-ethoxypropionate.
 16. The methodof claim 4, wherein said layer of protective material is a negativephotoresist without photo-sensitive components, or a positivephotoresist.
 17. The method of claim 4, wherein said layer of protectivematerial is poly-ethylene, polymethyl methacrylate (PMMA), poly glycidolmethacrylate (PGMA), propylene glycol monoethyl ether acetate, ethyleneglycol monoethyl ether acetate, cyclized 1,4-cis polyisoprene, novolakresin, methacrylate resin, cresol formaldehyde, ethyl lactate, or ethyl3-ethoxypropionate.
 18. The method of claim 4, said semiconductordevices comprising CCD devices.
 19. A method for singulation ofsemiconductor devices from a semiconductor substrate, comprising thesteps of: providing a semiconductor substrate; providing semiconductordevices over said substrate; providing a layer of non-water solublematerial over said semiconductor devices; singulating said substrate bysawing to provide singulated semiconductor die; mounting said singulatedsemiconductor device over a supporting surface; and removing said layerof non-water soluble material from said mounted singulated semiconductordevice.
 20. The method of claim 19, said semiconductor devicescomprising CMOS image sensor devices.
 21. The method of claim 19, saidsemiconductor devices comprising CCD devices.
 22. The method of claim19, wherein said non-water soluble material is a negative photoresistwithout photo-sensitive components, or a positive photoresist.
 23. Themethod of claim 19, wherein said non-water soluble material ispoly-ethylene, polymethyl methacrylate (PMMA), poly glycidolmethacrylate (PGMA), propylene glycol monoethyl ether acetate, ethyleneglycol monoethyl ether acetate, cyclized 1,4-cis polyisoprene, novolakresin, methacrylate resin, cresol formaldehyde, ethyl lactate, or ethyl3-ethoxypropionate.
 24. The method of claim 19, wherein the supportingsurface is a semiconductor substrate, a printed circuit board, a flexcircuit, a metallized substrate, a glass substrate and a semiconductordevice mounting support.
 25. The method of claim 24, wherein thesemiconductor substrate is a silicon semiconductor substrate, a ceramicsubstrate, a glass substrate, a gallium arsenide substrate, a siliconsubstrate comprising a single layer of material, such as a silicon waferor comprising silicon on insulator (SOI) technology and silicon onsapphire (SOS) technology, a doped or undoped semiconductor, epitaxiallayers of silicon supported by a base semiconductor, a sapphiresubstrate, or a substrate used for flat panel displays.
 26. A method forsingulation of CMOS image sensor device die or CCD device die from asemiconductor substrate, comprising the steps of: providing asemiconductor substrate, providing CMOS image sensor devices or CCDdevices over said substrate; forming a layer of non-water solublematerial over the CMOS image sensor devices or over the CCD devices;singulating said substrate by sawing, to provide singulated CMOS imagesensor device die or singulated CCD device die; mounting said singulatedCMOS device or CCD device over a supporting surface; and removing saidlayer of non-water soluble material from said mounted singulated CMOSdevice or CCD device.
 27. The method of claim 26, wherein the supportingsurface is a semiconductor substrate, a printed circuit board, a flex,circuit, a metallized substrate, a glass substrate and a semiconductordevice mounting support.
 28. The method of claim 26, wherein thesemiconductor substrate is a silicon semiconductor substrate, a ceramicsubstrate, a glass substrate, a gallium arsenide substrate, a siliconsubstrate comprising a single layer of material, such as a silicon waferor comprising silicon on insulator (SOI) technology and silicon onsapphire (SOS) technology, a doped or undoped semiconductor, epitaxiallayers of silicon supported by a base semiconductor, a sapphiresubstrate, or a substrate used for flat panel displays.
 29. The methodof claim 26, wherein said layer of protective material is a negativephotoresist without photo-sensitive components, or a positivephotoresist.
 30. The method of claim 26, wherein said non-water solublematerial is poly-ethylene, polymethyl methacrylate (PMMA), poly glycidolmethacrylate (PGMA), propylene glycol monoethyl ether acetate, ethyleneglycol monoethyl ether acetate, cyclized 1,4-cis polyisoprene, novolakresin, methacrylate resin, cresol formaldehyde, ethyl lactate, or ethyl3-ethoxypropionate.
 31. A method for singulation of semiconductordevices from a semiconductor substrate, comprising the steps of:providing a semiconductor substrate, providing semiconductor devicesover said substrate; providing a layer of protective material over saidsemiconductor devices; singulating said substrate to provide singulatedsemiconductor die; mounting said singulated semiconductor die over asupporting surface; and removing said layer of protective material fromsaid singulated semiconductor die.
 32. The method of claim 31, saidsemiconductor devices comprising CMOS image sensor devices.
 33. Themethod of claim 31, said semiconductor devices comprising CCD devices.34. The method of claim 31, said protective material being non-solublein water.
 35. The method of claim 31, wherein the supporting surface isa semiconductor substrate, a printed circuit board, a flex circuit, ametallized substrate, a glass substrate, or a semiconductor devicemounting support.
 36. The method of claim 35, wherein the semiconductorsubstrate is a silicon semiconductor substrate, a ceramic substrate, aglass substrate, a gallium arsenide substrate, a silicon substratecomprising a single layer of material, such as a silicon wafer orcomprising silicon on insulator (SOI) technology and silicon on sapphire(SOS) technology, a doped or undoped semiconductor, epitaxial layers ofsilicon supported by a base semiconductor, a sapphire substrate, or asubstrate used for flat panel displays.
 37. The method of claim 31,wherein said layer of protective material is a negative photoresistwithout photo-sensitive components, or a positive photoresist.
 38. Themethod of claim 31, wherein said layer of protective material ispoly-ethylene, polymethyl methacrylate (PMMA), poly glycidolmethacrylate (PGMA), propylene glycol monoethyl ether acetate, ethyleneglycol monoethyl ether acetate, cyclized 1,4-cis polyisoprene, novolakresin, methacrylate resin, cresol formaldehyde, ethyl lactate, or ethyl3-ethoxypropionate.
 39. A method for singulation of a CMOS image sensordevice die or a CCD device die from a semiconductor substrate,comprising the steps of: providing a semiconductor substrate, providingCMOS image sensor devices or CCD devices over said substrate; providinga layer of protective material over said CMOS image sensor devices orCCD devices ; singulating said substrate by sawing said substrate, toprovide singulated CMOS image sensor device die or singulated CCD devicedie; mounting said singulated semiconductor singulated CMOS image sensordevice die or singulated CCD device die over a supporting surface; andremoving said layer of protective material from said singulated CMOSimage sensor device die or from said singulated CCD device die.
 40. Themethod of claim 39, said protective material being non-soluble in water.41. The method of claim 39, wherein said layer of protective material isa negative photoresist without photosensitive components, or a positivephotoresist.
 42. The method of claim 39, wherein said layer ofprotective material is poly-ethylene, polymethyl methacrylate (PMMA),poly glycidol methacrylate (PGMA), propylene glycol monoethyl etheracetate, ethylene glycol monoethyl ether acetate, cyclized 1,4-cispolyisoprene, novolak resin, methacrylate resin, cresol formaldehyde,ethyl lactate, or ethyl 3-ethoxypropionate.
 43. The method of claim 39,wherein the supporting surface is a semiconductor substrate, a printedcircuit board, a flex circuit, a metallized substrate, a glass substrateand a semiconductor device mounting support.
 44. The method of claim 43,wherein the semiconductor substrate is a silicon semiconductorsubstrate, a ceramic substrate, a glass substrate, a gallium arsenidesubstrate, a silicon substrate comprising a single layer of material,such as a silicon wafer or comprising silicon on insulator (SOI)technology and silicon on sapphire (SOS) technology, a doped or undopedsemiconductor, epitaxial layers of silicon supported by a basesemiconductor, a sapphire substrate, or a substrate used for flat paneldisplays.
 45. A method for singulation of CMOS image sensor device dieor CCD device die from a semiconductor substrate, comprising the stepsof: providing a semiconductor substrate, providing CMOS image sensordevices or CCD devices over said substrate; providing a layer ofnon-water soluble protective material over said CMOS image sensordevices or CCD devices; singulating said substrate by sawing saidsubstrate to provide singulated CMOS image sensor device die orsingulated CCD device die; mounting said singulated semiconductorsingulated CMOS image sensor device die or singulated CCD device dieover a supporting surface; and removing said layer of protectivematerial from said singulated CMOS image sensor device die or saidsingulated CCD device die.
 46. The method of claim 45, wherein saidlayer of non-water soluble protective material is a negative photoresistwithout photo-sensitive components, or a positive photoresist.
 47. Themethod of claim 45, wherein said layer of non-water soluble protectivematerial is poly-ethylene, polymethyl methacrylate (PMMA), poly glycidolmethacrylate (PGMA), propylene glycol monoethyl ether acetate, ethyleneglycol monoethyl ether acetate, cyclized 1,4-cis polyisoprene, novolakresin, methacrylate resin, cresol formaldehyde, ethyl lactate, or ethyl3-ethoxypropionate.
 48. The method of claim 45, wherein the supportingsurface is a semiconductor substrate, a printed circuit board, a flexcircuit, a metallized substrate, a glass substrate and a semiconductordevice mounting support.
 49. The method of claim 48, wherein thesemiconductor substrate is a silicon semiconductor substrate, a ceramicsubstrate, a glass substrate, a gallium arsenide substrate, a siliconsubstrate comprising a single layer of material, such as a silicon waferor comprising silicon on insulator (SOI) technology and silicon onsapphire (SOS) technology, a doped or undoped semiconductor, epitaxiallayers of silicon supported by a base semiconductor, a sapphiresubstrate, or a substrate used for flat panel displays.